Niobium Silicide NbSi2 hmoov Nqe

Feature ntawmNiobium Silicide

Khoom specification ntawm Niobium Silicide hmoov

Nano qib (99.9%): 10nm, 20nm, 30nm, 40nm, 50nm, 80nm, 100nm, 200nm, 300nm, 500nm, 800nm.

Qib Micro (99.9%): 1um, 3um, 5um, 10um, 20um, 30um, 40nm, 45um, 75um, 150um, 200um, 300um.

Cov parameters ntawm NiSi2 yog raws li nram no:
Cov tshuaj muaj pes tsawg leeg: Si: 4.3%, Mg: 0.1%, tus so yog Ni

Qhov ceev: 8.585g / cm3

Kuj: 0.365 Q mm2 / M
Kuj kub coefficient (20-100 ° C) 689x10 rho tawm 6th hwj chim / KCoefficient ntawm thermal expansion (20-100 ° C) 17x10 minus 6th hwj chim / K
Thermal conductivity (100 ° C) 27 xwm negative first power K negative first power Melting point: 1309 °c
Daim ntawv thov teb:
Silicon yog cov khoom siv semiconductor siv dav tshaj plaws. Ntau yam ntawm cov hlau silicides tau kawm txog kev sib cuag thiab kev sib txuas tshuab ntawm cov khoom siv semiconductor.MoSi2, WSl thiabNi2Si tau nkag mus rau hauv kev tsim cov khoom siv hluav taws xob microelectronic.Cov silicon-basedthin films muaj qhov zoo sib xws nrog cov ntaub ntawv silicon, thiab tuaj yeem siv rau kev rwb thaiv tsev, kev sib cais. , passivation thiab interconnection nyob rau hauv silicon li, NiSi, raws li qhov zoo tshaj plaws nws tus kheej-aligned silicidematerial rau nanoscale li, tau dav kawm rau nws cov tsis tshua muaj silicon poob thiab tsawg formationheat peev nyiaj, tsis tshua muaj resistivity thiab tsis muaj linewidth nyhuv nyob rau hauv graphene electrode, npib tsib xee silicide tuaj yeem ncua qhov tshwm sim ntawm pulverization thiab tawg ntawm silicon electrode, thiab txhim kho cov conductivity ntawm the electrode.Qhov ntub dej thiab kis los ntawm nisi2 alloy ntawm SiC ceramics sib txawv
ntsuas kub thiab cua tau tshawb xyuas.