Niobium Silicide NbSi2 paura Utu
Āhuahira oNiobium Silicide
Tūemi | ingoa atu | CAS | EINECS | taumaha ngota | ira whakarewa |
NbSi2 | Niobium silicide; Niobium disilicide | 12034-80-9 | 234-812-3 | 149.0774 | 1940 ℃ |
Te tohu hua o te paura Niobium Silicide
Koeke Nano(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.
Koeke moroiti(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.
Ko nga tawhā o NiSi2 e whai ake nei:
Hanganga matū: Si: 4.3%,Mg:0.1%, ko te toenga ko Ni
Kiato: 8.585g/cm3
Ātete: 0.365 Q mm2 / M
Te whakarea pāmahana ātete(20-100 ° C)689x10 haunga te mana 6 / KCKorete o te roha waiariki (20-100° C)17x10 haunga te mana 6 / K
Te kawe werawera (100° C)27xwm toraro hiko tuatahi K toraro mana tuatahi Ira whakarewa: 1309 °c
Ngā āpure tono:
Ko te Silicon te nuinga o nga taputapu semiconductor e whakamahia ana. He momo momo silicides whakarewa kua akohia mo te whakapiri me te hangarau honohono o nga taputapu semiconductor.MoSi2, WSl andNi2Si kua whakauruhia ki te whakawhanaketanga o nga taputapu miihini hiko. , passivation me te honohono i roto i nga taputapu silicon, NiSi, te mea tino pai rawa atu ki te hangai i a koe ano mo te nanoscale. Ko nga taputapu, kua akohia mo te iti o te mate o te silicon me te iti o te tahua wera, te iti o te parenga me te kore he painga raina I roto i te graphene electrode, ka taea e te nickel silicide te whakaroa i te puta o te pulverization me te pakaru o te hiko hiko, me te whakapai ake i te kawe o te hikohiko. pānga o nisi2 koranu i runga i SiC uku i rerekē
i tirotirohia te pāmahana me te hau.
Tiwhikete:
He aha ta maatau e whakarato: