Niobium Silicide NbSi2 ufa Mtengo

Mbali yaNiobium Silicide

Katundu waNiobium Silicideufa

Nano grade (99.9%): 10nm, 20nm, 30nm, 40nm, 50nm, 80nm, 100nm, 200nm, 300nm, 500nm, 800nm.

Kalasi yaying'ono (99.9%): 1um, 3um, 5um, 10um, 20um, 30um, 40nm, 45um, 75um, 150um, 200um, 300um.

Magawo a NiSi2 ndi awa:
Chemical zikuchokera: Si: 4.3%, Mg:0.1%, ena onse ndi Ni

Kulemera kwake: 8.585g/cm3

Kukana: 0.365 Q mm2 / M
Kukana kutentha kwapakati (20-100 ° C) 689x10 kuchotsera mphamvu yachisanu ndi chimodzi / KCoefficient of matenthedwe owonjezera (20-100° C) 17x10 kuchotsera 6th mphamvu / K
Kutentha kwamphamvu (100° C) 27xwm mphamvu yoyamba yopanda mphamvu K yopanda mphamvu yoyamba Malo osungunuka: 1309 °c
Minda yofunsira:
Silicon ndiye zinthu zomwe zimagwiritsidwa ntchito kwambiri pa semiconductor.Mitundu yosiyanasiyana ya zitsulo zachitsulo zaphunziridwa kuti zigwirizane ndi teknoloji yolumikizirana ndi zida za semiconductor.MoSi2, WSl ndiNi2Si zakhala zikugwiritsidwa ntchito popanga zida zamagetsi zamagetsi. , passivation and interconnection in silicon devices, NiSi, monga momwe angadzipangire okha-aligned silicidematerial pazida za nanoscale, yakhala ikuphunziridwa kwambiri chifukwa cha kuchepa kwa silicon ndi kutsika kwa bajeti ya kutentha, kutsika kwa resistivity komanso kusakhala ndi mzere wozungulira Mu graphene electrode, nickel silicide imatha kuchedwa. kupezeka kwa pulverization ndi kusweka kwa silicon elekitirodi, ndikusintha kachulukidwe ka elekitirodi.
Kutentha ndi mlengalenga zinafufuzidwa.