Sapalai falegaosimea Suavai u'amea Gallium Indium Pa'u apa galinstan GaInSn Ga68.5 In21.5Sn10

Fa'amatalaga Puupuu:

1. Igoa o oloa: Gallium Indium Tin Liquid metal Galistan GaInSn Ga68.5 In21.5Sn10
2. Fuafuaga: GaInSn
3. Mama: 99.99%, 99.999%
4. Anotusi: Ga: In: Sn=68.5:21.5: 10 poʻo faʻapitoa
5. Fa'aaliga: Silver White u'amea vai
Email: Cathy@Shxlchem.com


Fa'amatalaga Oloa

Faailoga o oloa

Folasaga puupuu

2. Fuafua:GaInSn
3. Mama: 99.99%, 99.999%
4. Anotusi: Ga: In: Sn=68.5:21.5: 10 poʻo faʻapitoa

5. Fa'aaliga: Silver White u'amea vai

Fa'atinoga

Lelei lelei le vevela ma le eletise, mea mautu, saogalemu ma le oona

E talafeagai mo fagu palasitika ma e tatau ona tuʻu sina avanoa, e le mafai ona faʻapipiʻiina i pusa tioata.
Gallium Indium Tin, ua lauiloa foi o le GITO, o se u'amea ternary e aofia ai Gallium (Ga), Indium (In) ma Tin (Sn). Ose mea fa'apitoa fa'atasi ai ma mea fa'apitoa e mafai ona fa'alogoina ma fa'aeletise, fa'apena lelei mo fa'aoga eseese. O nisi faʻaoga talafeagai a le GITO e aofia ai:
1. Fa'alava fa'amama manino: O lo'o su'esu'e le GITO e mafai ona suitulaga mo le indium tin oxide (ITO), lea e fa'aaogaina lautele i fa'aeletise fa'ata'ita'i manino. E maualuga le manino ma maualalo le resistivity, e faʻaoga lelei mo le faʻaogaina o faʻaaliga faʻapipiʻi, solar cell, ma isi masini optoelectronic.
2. Mea tau eletise: GITO e iai mea tau eletise lelei ma e mafai ona faʻaogaina mo le toe faʻaleleia o le vevela i faʻaoga eseese e pei o fale taʻavale ma vaalele.
3. Fa'aeletonika fetu'utu'una'i: E mafai ona tu'u le GITO i luga o mea fa'apipi'i fe'avea'i e fau mea fa'aeletonika fe'avea'i fe'avea'i.
4. Sensors: GITO e mafai ona faʻaaogaina e fai ma mea maaleale mo masini eseese e pei o masini gas ma biosensors. I le aotelega, o le GITO ose mea fa'amoemoeina e mafai ona fa'aoga i alamanuia eseese ona o ona meatotino tulaga ese. O lo'o fa'aauau pea su'esu'ega i le GITO ma e fa'amoemoe e faia se sao taua i le atina'eina o tekonolosi fou.

Fa'aaogāga

1. Sauniuniga o Gallium Arsenide(GaAs), Gallium Phoshpide(GaP) maGallium Nitride(GaN) mo uaea
fesoʻotaʻiga, faʻamalamalamaga LED
2. GaAs concentrated solar cell ma CIGS Thin-film solar cell
3. Mea fa'amaneta ma Nd-Fe-B mea fa'amaneta alualu i luma
4. Fa'ameamea maualalo maualalo, saunia o Ga2O3 ma semiconductor chip
Fa'amatalaga
Oloa
GaInSn uamea( Ga: In: Sn=68.5:21.5: 10 )
Vaega Nu.
22112502
Tele
100kg
Aso o le gaosiga:
Nov. 25, 2022
Aso o le su'ega:
Nov. 25, 2022
Su'ega metotia
Elemene
Fa'atotonuga (ppm wt)
Mama
≥99.99%
>99.99%
Su'esu'ega ICP (ppm)
Fe
6
Cu
5
Pb
8
Bi
5
Sb
10
As
5
Ag
5
Zn
2
Al
5
Ni
2
Ca
2
Si
10
Mg
5
Fa'ailoga
Xinglu

oloa fa'atatau:

Gallium oxide Ga2O3 pa'u,Ga2S3 gallium sulfide pauta,Uamea vaiGallium Indium Alloy GaIn uamea

Auina mai matou suʻesuʻega e mauaGallium Indium TinGalistanGaInSn tau




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