High Performance nano Sio Silicon monoxide poda

Tsananguro pfupi:

Sio Silicon monoxide
Boling Point: 1880 ° C
Inomhanyisa Point: 1720 ° C
Sensitivity: Sensitive kune humidity
Mamiriro ekuchengetedza: Yakanyatso kurambidzwa kuchengeta mune yakanyorova uye yakanyanya tembiricha nzvimbo. Density (GLCM3): 2.13
Nhamba Nhamba: 10097-28-6
Chikumbiro: Inoshandiswa seyekugadzirira kweFefer Ceramic Synthetotic Raw zvinhu, Optical girazi uye semicononductor zvinhu. Iyo inosungirirwa mune yekuvhurwa uye yakachekwa pane iyo simbi girazi pamusoro pezvisikwa zvezviridzwa sefirimu rinodzivirira uye kugadzirira kweMicononductor zvinhu.

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Chimiro chenano Sio Silicon monoxide poda

1. Particle size Kudzora: 100nm-10μm inotorwa, kusangana nezvinodiwa zvekusiyana
2..

Kushandiswa kwenano Sio Silicon monoxide poda

1. Kugadzirira kweSilicon - based anode zvigadzirwa zvevatariri veAyode zvigadzirwa zveLithium ion yechipiri mabhatiri
2. Senge yakanaka ceramic Synthetic zvisi zvekushandisa, senge silicon nitride, silicon carbide yakanaka ceramic poda

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