High performance nano SiO Silicon monoxide poda

Tsanangudzo Pfupi:

SiO Silicon monoxide
Kubikira nzvimbo: 1880°c
Kunyungudika: 1720°c
Sensitivity: inonzwa kune humidity
Mamiriro ezvinhu ekuchengetedza: Inorambidzwa zvachose kuchengeta munzvimbo dzine hunyoro uye dzakanyanya kupisa. Density (glcm3): 2.13
Nhamba yeCAS: 10097-28-6
Chishandiso: Inoshandiswa segadziriro yezvakanaka zveceramic synthetic raw materials, optical glass uye semiconductor zvinhu. Inoputirwa muvacuum uye yakaputirwa pagirazi resimbi pamusoro pezviridzwa zvemaziso sefirimu rinodzivirira uye kugadzirira semiconductor zvinhu.


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Feature ofnano SiO Silicon monoxide hupfu

1. Particle saizi control: 100nm-10μm inodzoreka, kusangana nezvinodiwa zvekusiyanisa
2. Kuchena kwepamusoro: inopfuura 99.9% ms chisungo cheSi-P nesilicon muzvikamu zvesilicon uye inoparadzirwa zvakaenzana.

Kushandiswa kwenano SiO Silicon monoxideupfu

1. Kugadzirira kwesilicon - based anode zvinhu zve precursors yeanode zvinhu zve lithium ion secondary mabhatiri.
2. Seyakanaka ceramic yekugadzira mbishi zvinhu, sesilicon nitride, silicon carbide yakanaka ceramic hupfu mbishi zvinhu.

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5

Zvatinokwanisa kupa:

34


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