Niobium Silicide NbSi2 poda Mutengo

Feature yeNiobium Silicide

Product tsanangudzo yeNiobium Silicideupfu

Nano giredhi(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro giredhi(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Iwo ma parameter eNiSi2 ndeaya anotevera:
Kemikari inoumbwa: Si: 4.3%, Mg: 0.1%, imwe yasara Ni

Density: 8.585g/cm3

Kupikisa: 0.365 Q mm2 / M
Resistance tembiricha coefficient(20-100 ° C)689x10 minus 6th simba / KCoefficient of thermal kuwedzera (20-100° C)17x10 minus 6th simba / K
Thermal conductivity (100° C)27xwm isina kunaka simba rekutanga K isimba rekutanga Simba rinonyungudika: 1309 °c
Nzvimbo dzekushandisa:
Silicon ndiyo inonyanya kushandiswa semiconductor zvinhu.Mhando dzakasiyana-siyana dzesimbi silicides dzakadzidzwa kuti dzibatane uye dzekubatanidza tekinoroji yesemiconductor midziyo.MoSi2, WSl neNi2Si yakaunzwa mukugadzirwa kwemicroelectronic devices.Mafirimu aya esilicon-basedthin anoenderana zvakanaka nezvinhu zvesilicon, uye anogona kushandiswa kuvharisa, kuzviparadzanisa nevamwe. , passivation uye interconnection musilicon madivayiri, NiSi, seyakanyanya kuvimbisa yega-aligned silicidematerial ye nanoscale madivayiri, yakadzidzwa zvakanyanya nekuda kwayo yakaderera silicon kurasikirwa uye yakaderera formationheat bhajeti, yakaderera resistivity uye hapana linewidth maitiro Mugraphene electrode, nickel silicide inogona kunonoka. kuitika kwekuputika uye kuputika kwesilicon electrode, uye kunatsiridza conductivity ye electrode.Kunyorova uye kupararira mhedzisiro ye nisi2 alloy paSiC ceramics pane zvakasiyana.
tembiricha uye mamiriro ekunze zvakaongororwa.