Niobium Silicide NbSi2 poda Mutengo

Feature yeNiobium Silicide

Chigadzirwa chinotsanangurwa cheNiobium Silicide poda

Nano giredhi(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro giredhi(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Iwo ma parameter eNiSi2 ndeaya anotevera:
Kemikari inoumbwa: Si: 4.3%, Mg: 0.1%, imwe yasara Ni

Density: 8.585g/cm3

Kupikisa: 0.365 Q mm2 / M
Resistance tembiricha coefficient(20-100 ° C)689x10 minus 6th simba / KCoefficient of thermal kuwedzera (20-100° C)17x10 minus 6th simba / K
Thermal conductivity (100° C)27xwm isina kunaka simba rekutanga K isimba rekutanga Simba rinonyungudika: 1309 °c
Nzvimbo dzekushandisa:
Silicon ndiyo inonyanya kushandiswa semiconductor zvinhu. Mhando dzakasiyana-siyana dzesimbi silicides dzakadzidzwa kuti dzibatane uye dzekubatanidza tekinoroji yesemiconductor midziyo.MoSi2, WSl neNi2Si yakaunzwa mukugadzirwa kwemicroelectronic devices.Mafirimu aya esilicon-basedthin anoenderana zvakanaka nezvinhu zvesilicon, uye anogona kushandiswa kuvharisa, kuzviparadzanisa nevamwe. , passivation uye kubatanidza musilicon madivayiri, NiSi, seyakanyanya kuvimbisa yega-aligned silicidematerial ye nanoscale zvishandiso, Yakadzidzwa zvakanyanya nekuda kwekuderera kwayo kwesilicon kurasikirwa uye kuderera kwekupisa bhajeti, yakaderera resistivity uye isina linewidth mhedzisiro Mugraphene electrode, nickel silicide inogona kunonoka kuitika kwepulverization uye kuputika kwesilicon electrode, uye kunatsiridza conductivity yeelectrode. Kunyorova nekupararira kwemhedzisiro nisi2 alloy paSiC ceramics pane zvakasiyana
tembiricha uye mamiriro ekunze zvakaongororwa.