Niobium Silicide NbSi2 ntụ ntụ ọnụ ahịa

Nkọwa dị mkpirikpi:

Niobium Silicide NbSi2 ntụ ntụ ọnụ ahịa
Nọmba CAS: 12034-80-9
Njirimara: ntụ ntụ ntụ ntụ ojii
Njupụta: 5.7g/cm3
Ebe mgbaze: 1940 ℃
Na-eji: akụkụ turbine nke dabeere na siliconized, sekit jikọtara ọnụ, ihe nhazi okpomọkụ dị elu, wdg.


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Nkọwa ngwaahịa

Njirimara nkeNiobium silicide

Ihe aha ozo CAS EINECS molekụla arọ ebe agbaze
NbSi2 niobium silicide; Niobium disilicide 12034-80-9 234-812-3 149.0774 1940 ℃

Nkọwa ngwaahịa nke Niobium Silicide ntụ ntụ

Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro grade(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Usoro nke NiSi2 bụ ndị a:
Ngwakọta kemịkalụ: Si: 4.3%,Mg:0.1%, nke ọzọ bụ Ni

Njupụta: 8.585g/cm3

Nguzogide: 0.365 Q mm2 / M
Ọnụ ọgụgụ okpomọkụ na-eguzogide (20-100 ° C) 689x10 mwepu 6th ike / KCoefficient nke thermal mgbasa (20-100 ° C) 17x10 mwepu 6th ike / K
Thermal conductivity (100°C)27xwm ike mbụ adịghị mma K adịghị mma mbụ ike mgbaze: 1309 °c
Mpaghara ngwa:
Silicon bụ ihe semiconductor kacha eji eme ihe. A mụọla ihe dị iche iche nke silicides metal dị iche iche maka kọntaktị na teknụzụ njikọ njikọ nke ngwaọrụ semiconductor.MoSi2, WSl naNi2Si abanyela n'ime mmepe nke ngwaọrụ microelectronic. Ihe nkiri ndị a na-adabere na silicon na-ejikọta ya na ihe ndị dị na silicon, a pụkwara iji ya mee ihe maka mkpuchi, iche iche. ,passivation na interconnection na silicon ngwaọrụ, NiSi, dị ka ndị kasị na-ekwe nkwa onwe kwadoro silicidematerial maka nanoscale ngwaọrụ, nwere. a na-amụ ọtụtụ ebe maka obere silicon ọnwụ na obere formationheat mmefu ego, obere resistivity na enweghị linewidth mmetụta Na graphene electrode, nickel silicide nwere ike igbu oge omume nke pulverization na cracking nke silicon electrode, na melite conductivity nke electrode.The wetting na-agbasa mmetụta nke nisi2. alloy na ceramics SiC dị iche iche
a nyochara ọnọdụ okpomọkụ na ikuku.

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