Sahayda warshadaynta birta dareeraha ah ee Gallium Indium Alloy GaIn birta Ga75.5In24.5 / Ga78.6In21.4
Hordhac kooban
1. Magaca alaabta: Warshada sahayda birta dareeraha ahGallium IndiumAlloy GaIn birta Ga75.5In24.5 / Ga78.6In21.4
2. Formula:GaIndaawaha
3. daahirnimo: 99.99%, 99.999%
4. Nuxurka: Ga: In=75.5: 24.5 (78.5: 21.4 ama la habeeyey)
5. Muuqaal: Silver White Bir dareere ah
Waxqabadka
kulaylka iyo korantada heer sare ah, guryaha deggan, ammaan ah oo aan sun ahayn
Ku habboon dhalada balaastiigga ah waana in looga tagaa meel bannaan, laguma rari karo weelasha dhalada ah.
Gallium-indium daawahawaa daawaha bir ah oo ka kooban indium iyo gallium. Halabuurka ugu caansan ee daawahaani waa 75% gallium iyo 25% indium (GaIn 75/25). Iyadoo ku xiran saamiga walxaha, sifooyinka jireed iyo kiimikaad ee daawadu way kala duwanaan doonaan. Daawahaan waxaa loo yaqaanaa barta dhalaalka hoose ee ka hooseeya heerkulka qolka, taas oo ka dhigaysa walxo waxtar u leh codsiyada cryogenic. Sidoo kale waa daawaha eutectic, taasoo la macno ah inay leedahay heerkul kala-guur oo dareere fiiqan-ilaa-adag, taasoo ka dhigaysa mid faa'iido leh sida heerkulbeeg ama kulayl.Alaabooyinka Gallium-indiumaad bay u dhaqmaan, taas oo ka dhigaysa inay faa'iido u leeyihiin codsiyada elektaroonigga ah iyo korantada iyo sidoo kale alxanka iyo naxaasta. Iyada oo ay ugu wacan tahay barta dhalaalka oo hooseeya iyo kulaylka wanaagsan ee kuleylka, waxa kale oo loo isticmaali karaa qaboojiye bir ah oo dareere ah. Guud ahaan, gallium indium alloys waxay leeyihiin isku-dhafan gaar ah oo guryaha ah kuwaas oo ka dhigaya kuwo ku habboon codsiyada kala duwan, gaar ahaan heerkulka hooseeya, korantada, iyo hababka maaraynta kulaylka.
Codsiga
1. Diyaarinta Gallium Arsenide (GaAs), Gallium Phospide (GaP) iyoGallium Nitride(GaN) ee wireless-ka
isgaarsiinta, iftiinka LED
2. Unug cadceedda ku urursan oo GAAs ah iyo CIGS unug-fulim khafiif ah
3. Walaxda birlabeedka iyo Nd-Fe-B agabka birlabeedka horumarsan
4. alloy dhibic dhalaalaysa Low, diyaarinta ahGa2O3iyo chip semiconductor
isgaarsiinta, iftiinka LED
2. Unug cadceedda ku urursan oo GAAs ah iyo CIGS unug-fulim khafiif ah
3. Walaxda birlabeedka iyo Nd-Fe-B agabka birlabeedka horumarsan
4. alloy dhibic dhalaalaysa Low, diyaarinta ahGa2O3iyo chip semiconductor
Tilmaamid
| Alaabta | GaIn birta( Ga: In=75.5: 24.5 ) | ||
| Dufcaddii No. | 22112503 | Tirada | 10kg |
| Taariikhda wax soo saarka: | Nofeembar 25, 2022 | Taariikhda imtixaanka: | Nofeembar 25, 2022 |
| Habka tijaabada | Curiyaha | Xooga saarida (ppm wt) | |
| daahirnimo | ≥99.99% | 99.99% | |
| Falanqaynta ICP (ppm) | Fe | 9 | |
| Cu | 10 | ||
| Pb | 12 | ||
| As | 5 | ||
| Ag | 5 | ||
| Zn | 10 | ||
| Al | 8 | ||
| Ca | 5 | ||
| Si | 6 | ||
| Mg | 5 | ||
| Summada | Xinglu | ||
