Niobium Silicide NbSi2 budada Qiimaha

MuuqaalkaNiobium Silicide

Tilmaamaha alaabta ee budada Niobium Silicide

Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro grade(99.9%):1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Halbeegyada NiSi2 waa sida soo socota:
Halabuurka kiimikada: Si: 4.3%, Mg: 0.1%, inta soo hartay waa Ni

Cufnaanta: 8.585g/cm3

Iska caabin: 0.365 Q mm2 / M
Isku dhafka heerkulka iska caabinta (20-100 ° C) 689x10 laga jaray awoodda 6aad / KCoefficient of balaadhinta kulaylka (20-100 ° C) 17x10 laga jaray awoodda 6aad / K
Dareenka kulaylka (100° C) 27xwm taban awoodda koowaad K taban dhibicda koowaad: 1309 °c
Goobaha codsiga:
Silikoonku waa qalabka semiconductor-ka ugu badan ee la isticmaalo. Noocyo kala duwan oo silicides bir ah ayaa lagu bartay xiriirka iyo tignoolajiyada isku xirka qalabka semiconductor.MoSi2, WSl iyoNi2Si ayaa lagu soo bandhigay horumarinta aaladaha microelectronic. , Passivation iyo isku xirka aaladaha silikon, NiSi, oo ah kuwa ugu rajada badan silicidematerial-ka is-waafajinta ee aaladaha nanoscale, ayaa leh ayaa si weyn loo bartay ee khasaaraha Silicon hooseeyo iyo miisaaniyadda formationheat hoose, iska caabin hoose iyo saamayn linewidth ma In graphene electrode, nikkel silicide daahin kartaa dhacdo ee firidhsan iyo dildilaaca ee electrode silicon, iyo hagaajinta conductivity ofthe electrode.The qoynta iyo faafinta saamaynta nisi2 Alloy on ceramics SiC kala duwan
heerkulka iyo jawiga ayaa la baaray.