Niobium Silicide NbSi2 phofo Theko

Tšobotsi eaNiobium silicide

Tlhaloso ea sehlahisoa ea phofo ea Niobium Silicide

Nano grade(99.9%):10nm,20nm,30nm,40nm,50nm,80nm,100nm,200nm,300nm,500nm,800nm.

Micro grade(99.9%): 1um,3um,5um,10um,20um,30um,40nm,45um,75um,150um,200um,300um.

Litekanyetso tsa NiSi2 ke tse latelang:
Sebopeho sa lik'hemik'hale: Si: 4.3%, Mg: 0.1%, tse ling kaofela ke Ni

Boima: 8.585g/cm3

Khanyetso: 0.365 Q mm2 / M
Mocheso o hanyetsanang le mocheso (20-100 ° C)689x10 ho tloswa matla a 6 / KCoefficient ea katoloso ea mocheso (20-100° C)17x10 ho tloswa 6th power / K
Thermal conductivity (100° C)27xwm ha mpe matla a pele K ha mpe matla a pele Ntlha e qhibilihisang: 1309 °c
Libaka tsa kopo:
Silicon ke thepa ea semiconductor e sebelisoang ka ho fetisisa. Ho 'nile ha ithutoa mefuta e fapaneng ea li-silicone tsa tšepe bakeng sa theknoloji ea ho ikopanya le ea ho hokahanya ha lisebelisoa tsa semiconductor.MoSi2, WSl le Ni2Si li kenyelelitsoe ntlafatsong ea lisebelisoa tsa microelectronic.Lifilimi tsena tsa silicon-basedthin li tsamaisana hantle le lisebelisoa tsa silicon,' me li ka sebelisoa bakeng sa ho pata, ho itšehla thajana. , passivation le ho hokahanya lisebelisoa tsa silicon, NiSi, e le silicidematerial e tšepisang ka ho fetisisa bakeng sa lisebelisoa tsa nanoscale, E 'nile ea ithutoa ka bophara bakeng sa tahlehelo ea eona e tlaase ea silicon le tekanyetso e tlaase ea mocheso oa mocheso, matla a tlaase a resistivity ebile ha a na phello ea linewidth Ka graphene electrode, nickel silicide e ka liehisa ho etsahala ha pulverization le ho phunyeha ha silicon electrode, le ho ntlafatsa conductivity ea electrode. nisi2 alloy ho SiC ceramics ka mefuta e fapaneng
lithempereichara le maemo a leholimo li ile tsa hlahlojoa.