Ukucoceka okuphezulu kweCas 25617-97-4 Gallium nitride 4N GaN ixabiso lomgubo

Igama lemveliso: gallium nitride

I-gallium nitride Ifomula yemolekyuli :GaN

gallium nitride Umbala: tyheli mhlophe

gallium nitride Ubunzima beMolekyuli: 83.72

Isatifikethi soHlahlelo lweGallium Nitride:

Iimpawu zegallium nitride:

iGallium nitride(I-GaN) i-semiconductor eneempawu ezizodwa ezenza kube luncedo ekudalweni kwezixhobo ezisebenzayo ze-optoelectronic ukongeza kumandla aphezulu kunye nobushushu obuphezulu bezicelo. Ezi zixhobo kufuneka zifumane usetyenziso olubanzi olusebenzayo kwiimarike zorhwebo kunye nokukhusela. I-Database ye-Inspec igubungela uninzi lwezi teknoloji zivelayo.

Ukusetyenziswa kwe-gallium nitride:

I-GaN inokusetyenziselwa izikrini ezinkulu zikamabonakude okanye iiphaneli ezincinci ezinemibala egcweleyo koololiwe okanye ezibhasini. Ukuboniswa kombala ogcweleyo bekungenzeki kuba ii-LED eziluhlaza kunye noluhlaza bezingaqaqambi ngokwaneleyo. Ii-LED ezisekwe kwi-GaN zisebenza ngakumbi kwaye ke ngoko zibonelela ngenye indlela yee-LED eziluhlaza kunye neluhlaza.

Ukugcinwa kwe-gallium nitride:

iGallium nitridekufuneka ivalwe kwaye igcinwe kwiqondo lokushisa, ukuba iimeko zivunyelwe, zingagcinwa kwi-argon atmosphere.