Ngophuhliso olukhawulezileyo lweTekhnoloji ye-semiconductor, i-bandgap ebanzi ye-Semiconductor ihamba kancinci i-Technology yeTekhnoloji yexesha elizayo, kunye ne-geliyoum oxide (ga₂o₃) yenye yezona zilungileyo. Ngeempawu zayo ezintle, i-geliyoum oxide itshintsha imeko yamandla e-elektroniki kunye nokufunyanwa kwefoto.
Inkcazo yeI-Gallium Oxide
I-Gallium Oxide (Gaşo₃) yi-Inorganic Compowend ngefomula yekhemikhali yeIGa₂o₃kwaye yi-oxidey ye-gelium. Ine-bandgap exhaphakileyo, ukwaphuka kombane okuphezulu kunye nokuzinza okugqwesileyo, kwaye yi-band bandgap ebaluleke kakhulu kakhulu.
Amanqaku: Inombolo ye-CASS:12024-21-4Ubunzima boMolekyuli: 187.44 g / mol ukunyibilika: I-1900 ° 2 (i-crystal yomgubo;
Iimpawu kunye nokusetyenziswa kweI-Gallium Oxide
I-Gallium Oxide i-bandgap ye-bandgap ye-semiconductor ye-bandgap i-4.8 e-EV, i-EV, kwi-EV engaphezulu kwe-IV (1.1 iV) kunye ne-Silicon Carbide (3.3 EV). Olu phawu lunika i-geliyo izibonelelo ezibalulekileyo kwezi nkalo zilandelayo:
Amandla e-elektroniki: I-Gallium Oxide inendawo yombane oqhubekileyo, enokuvelisa izixhobo ezinamandla nezincinci zamandla, ezinje ngee-voltage ephezulu kunye nabaguquli bemisebenzi ephezulu.
I-Ultraviolet yoochwephesha: Ngenxa yobuntu bawo obuphezulu kwi-Ultraviolet, i-Gallium Oxide isetyenziswa ngokubanzi ekuboneni nasekufumanekeni kwezokhuseleko. Izixhobo ezibonakalayo ze-elektroniki: I-Gallium Oxide ilungele ukungafihli kwaye inokusetyenziswa kwimiboniso ebonakalayo kwaye isebenze
IXESHA LOKUQALA: Nge-12 kaFebruwari-12 ukuya ku-525